TITLE

Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

AUTHOR(S)
Hsu, J. W. P.; Manfra, M. J.; Lang, D. V.; Richter, S.; Chu, S. N. G.; Sergent, A. M.; Kleiman, R. N.; Pfeiffer, L. N.; Molnar, R. J.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1685
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The reverse bias leakage current in macroscopic GaN Schottky diodes is found to be insensitive to barrier height. Using a scanning current-voltage microscope, we show that the reverse bias current occurs at small isolated regions, while most of the sample is insulating. By comparing the current maps to topographic images and transmission electron microscopy results, we conclude that reverse bias leakage occurs primarily at dislocations with a screw component. Furthermore, for a fixed dislocation density, the V/III ratio during the molecular beam epitaxial growth strongly affects reverse leakage, indicating complex dislocation electrical behavior that is sensitive to the local structural and/or chemical changes. © 2001 American Institute of Physics.
ACCESSION #
4710911

 

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