Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers

Teng, C. W.; Aboelfotoh, M. O.; Davis, R. F.; Muth, J. F.; Kolbas, R. M.
March 2001
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1688
Academic Journal
We have studied the electrical and photoluminescence (PL) properties of a Si delta-doped GaN layer grown by metalorganic chemical vapor deposition. The Hall mobility and electron sheet concentration are 726 cm[sup 2]/V s and 1.9x10[sup 12] cm[sup -2], respectively, at 2 K. A PL peak located at 78 meV below the band gap of GaN is observed at 77 K. This PL peak is attributed to the radiative recombination between electrons in the two-dimensional quantum states and photoexcited holes in GaN, which is consistent with simulation results using a one-dimensional Poisson and Schro¨dinger equation solver. The peak disappears at temperatures higher than 77 K and is not observed in uniformly doped GaN layers. © 2001 American Institute of Physics.


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