TITLE

Electrical activation of carbon in GaAs: Implantation temperature effects

AUTHOR(S)
Danilov, I.; de Souza, J. P.; Murel, A. V.; Pudenzi, M. A. A.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1700
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Carbon was implanted into GaAs at the energy of 1 MeV with doses between 1x10[sup 13] and 2x10[sup 15] cm[sup -2] at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in the samples implanted at 80 K compared to those implanted at RT or 300 °C, attaining a maximum hole concentration of 2x10[sup 19] cm[sup -3]. The redistribution of the C profile during rapid thermal annealing at temperatures from 700 to 950 °C for 10 s was found negligible, independently of the implantation temperature. Similar improvements in the electrical properties were also verified in samples implanted at 80 K with a lower energy of 60 keV. We consider that despite the light mass of C ions, the reduced dynamic annealing at 80 K allows the accumulation of an abundance of As vacancies, which assist the C activation as a p-type dopant. © 2001 American Institute of Physics.
ACCESSION #
4710905

 

Related Articles

  • Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers. Teng, C. W.; Aboelfotoh, M. O.; Davis, R. F.; Muth, J. F.; Kolbas, R. M. // Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1688 

    We have studied the electrical and photoluminescence (PL) properties of a Si delta-doped GaN layer grown by metalorganic chemical vapor deposition. The Hall mobility and electron sheet concentration are 726 cm[sup 2]/V s and 1.9x10[sup 12] cm[sup -2], respectively, at 2 K. A PL peak located at...

  • Observation of a Cole–Davidson type complex conductivity in the limit of very low carrier densities in doped silicon. Jeon, Tae-In; Grischkowsky, D. // Applied Physics Letters;5/4/1998, Vol. 72 Issue 18 

    Using THz time-domain spectroscopy to measure the complex conductivity of doped silicon from low frequencies to frequencies higher than the THz plasma frequency and the carrier damping rate, we were able to show in the limit of extremely low carrier densities N<10[sup 13]/cm[sup 3], that the...

  • Perpendicular electronic transport in doping superlattices. Schubert, E. F.; Cunningham, J. E.; Tsang, W. T. // Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p817 

    Electronic transport measurements are performed at 77 and 300 K on doping superlattices in perpendicular direction to the quantum well planes. The periods of the doping superlattices range from 150 to 600 Ã…. The current-voltage characteristics in long period doping superlattices (type B) are...

  • On the mechanism of conductivity enhancement in PEDOT/PSS film doped with sorbitol. Jiao Li; Juncheng Liu; Gao, Congjie // e-Polymers;Apr2011, p1 

    The mechanism of conductivity enhancement in PEDOT/PSS film doped with sorbitol is investigated by X-ray diffraction (XRD), Fourier transform Raman spectroscopy (FT-RM), Atomic force microscopy (AFM), Scanning electron microscopy (SEM). The XRD show that the amorphous state of sorbitol-doped...

  • Two-dimensional electron or hole gas at ZnO/6H-SiC interface. Lu, Y. H.; Xu, B.; Wu, R. Q.; Feng, Y. P. // Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p192109 

    Electronic structures of ZnO(0001)/6H-SiC(0001) interfaces are investigated using first-principles method. Two-dimensional charge carriers are found at the interfaces. Depending on the interface structure, the type of charge carriers can be n-type if oxygen terminated ZnO(0001) is grown on SiC...

  • Charge injection in doped organic semiconductors. Hosseini, A. R.; Wong, Man Hoi; Shen, Yulong; Malliaras, George G. // Journal of Applied Physics;1/15/2005, Vol. 97 Issue 2, p023705 

    The influence of doping on the process of charge injection from a metal electrode into a model organic semiconductor is investigated. The contact resistance, which is the relevant figure-of-merit, is found to decrease dramatically upon doping beyond what is expected from theory and seen in...

  • The defect structure, sintering behavior, and dielectric responses of Cr2O3-doped Sr0.5Ba0.5Nb2O6. Tsang-Tse Fang; Fung-Yu Chen // Journal of Applied Physics;7/1/2006, Vol. 100 Issue 1, p014110 

    Sr0.5Ba0.5Nb2O6 (SBN50) with and without Cr2O3 dopant had been prepared by the solid-state reaction. The structural variations of undoped and Cr2O3-doped SBN were examined by the x-ray diffractometer. As the Cr2O3 content increases, the lattice parameters remain almost unchanged initially but...

  • Photoconversion in n-ZnO:Al/PdPc/p-CuIn3Se5 Structures. Bodnar', I. V.; Dmitrieva, E. S.; Nikitin, S. E.; Rud', V. Yu.; Rud', Yu. V.; Terukov, E. I. // Semiconductors;Apr2005, Vol. 39 Issue 4, p402 

    n-ZnO:Al/PdPc/p-CuIn3Se5 photosensitive structures have been proposed and fabricated for the first time by vacuum sublimation of palladium phthalocyanine on the surface of wafers of the ternary semiconductor compound CuIn3Se5 and by magnetron sputtering of n-ZnO:Al films on the surface of...

  • Enhancement of Electrical Conductivity of ZnO Ceramic Varistor by Al doping. Sedky, A.; Al-Sawalha, Ayman; Yassin, Amal M. // Egyptian Journal of Solids;2008, Vol. 31 Issue 2, p205 

    Zn1-xAlxO ceramic samples (0.00 ≤ x ≤ 0.20) are sintered in air at temperature of 850 °C for 10 h and then quenched to room temperature. Structural, surface morphology and I-V characteristics of the samples are investigated by using XRD, SEM and dc electrical measurements. It is...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics