Electrical activation of carbon in GaAs: Implantation temperature effects

Danilov, I.; de Souza, J. P.; Murel, A. V.; Pudenzi, M. A. A.
March 2001
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1700
Academic Journal
Carbon was implanted into GaAs at the energy of 1 MeV with doses between 1x10[sup 13] and 2x10[sup 15] cm[sup -2] at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in the samples implanted at 80 K compared to those implanted at RT or 300 °C, attaining a maximum hole concentration of 2x10[sup 19] cm[sup -3]. The redistribution of the C profile during rapid thermal annealing at temperatures from 700 to 950 °C for 10 s was found negligible, independently of the implantation temperature. Similar improvements in the electrical properties were also verified in samples implanted at 80 K with a lower energy of 60 keV. We consider that despite the light mass of C ions, the reduced dynamic annealing at 80 K allows the accumulation of an abundance of As vacancies, which assist the C activation as a p-type dopant. © 2001 American Institute of Physics.


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