TITLE

Micro-Raman and dielectric phase transition studies in antiferroelectric PbZrO[sub 3] thin films

AUTHOR(S)
Dobal, P. S.; Katiyar, R. S.; Bharadwaja, S. S. N.; Krupanidhi, S. B.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1730
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Antiferroelectric materials are found to be good alternative material compositions for high-charge-storage devices and transducer applications. Lead zirconate (PZ) is a room-temperature antiferroelectric material. The antiferroelectric nature of PZ thin films was studied over a temperature range of 24-300 °C, in terms of Raman scattering, dielectric constant, and polarization. Temperature-dependent dielectric and polarization studies indicated a nonabrupt phase transition. To alleviate the extrinsic effects influencing the phase transition behavior, Raman scattering studies were done on laser-ablated PZ thin films as a function of temperature and clear phase transformations were observed. © 2001 American Institute of Physics.
ACCESSION #
4710894

 

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