Oblique stacking of three-dimensional dome islands in Ge/Si multilayers

Sutter, P.; Mateeva-Sutter, E.; Vescan, L.
March 2001
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1736
Academic Journal
The organization of Ge "dome" islands in Ge/Si multilayers has been investigated by cross-sectional transmission electron microscopy. Ge domes are found to spontaneously arrange in oblique stacks, replicating at a well-defined angle from one bilayer to the next. The formation of oblique island stacks is governed by a complex interplay of surface strain, generated by the already buried islands, and surface curvature, caused by the inherent tendency of large domes to carve out material from the surrounding planar substrate. © 2001 American Institute of Physics.


Related Articles

  • The effect of the substrate temperature on extended defects created by hydrogen implantation in germanium. David, M. L.; Pailloux, F.; Babonneau, D.; Drouet, M.; Barbot, J. F.; Simoen, E.; Claeys, C. // Journal of Applied Physics;Nov2007, Vol. 102 Issue 9, p096101 

    H implantation in Ge was carried out at two substrate temperatures, room temperature (RT) and 150 °C. The microstructure of the as-implanted Ge samples was studied by transmission electron microscopy and grazing incidence small-angle x-ray scattering. Small (001) and {111} platelets and {113}...

  • Band alignments and photon-induced carrier transfer from wetting layers to Ge islands grown on Si(001). Wan, J.; Jin, G. L.; Jiang, Z. M.; Luo, Y. H.; Liu, J. L.; Wang, Kang L. // Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1763 

    Temperature- and excitation-power-dependent photoluminescence measurements were carried out for the multilayer structure of Ge islands grown on a Si(001) substrate by gas-source molecular-beam epitaxy. When the excitation power increases from 10 to 400 mW, the photoluminescence peak from the Ge...

  • High repetition rate far-infrared rho-type germanium hot hole lasers. Brundermann, E.; Roser, H.P. // Applied Physics Letters;12/11/1995, Vol. 67 Issue 24, p3543 

    Examines the effect of high repetition rates on the four pulsed rho-type germanium lasers. Processes in determining each crystal characteristic value; Materials used in connecting the dynamical behavior of light, heavy holes to optical phonons and impurity states; Implication of temperature in...

  • Direct observation of a surface charge density wave. Carpinelli, Joseph M.; Weitering, Hanno H. // Nature;5/30/1996, Vol. 381 Issue 6581, p398 

    Reports on the observation and characterization of a reversible, temperature-induces charge density wave (CDW) localized at the lead-coated surface of a germanium crystal. Periodic valence-charge redistribution accompanying the formation; Theoretical calculations on the electron-photon...

  • Synthesis of large-area germanium cone-arrays for application in electron field emission. Wan, Q.; Wang, T. H.; Feng, T.; Liu, X. H.; Lin, C. L. // Applied Physics Letters;10/21/2002, Vol. 81 Issue 17, p3281 

    High-vacuum electron-beam evaporation was used to synthesize germanium (Ge) cone-arrays on N[sup +]-type (100) Si. The surface morphology of Ti nanocrystals' catalyst and Ge cone-arrays was investigated by scanning electron microscopy and atomic force microscopy. The lattice constant of the Ge...

  • Electronic properties of defects introduced in p-type Si[sub 1-x]Ge[sub x] during ion etching. Goodman, S. A.; Auret, F. D.; Mamor, M.; Greiner, A. // Applied Physics Letters;7/13/1998, Vol. 73 Issue 2, p0 

    We have investigated the electronic properties of defects introduced in boron-doped, strained p-type Si[sub 1-x]Ge[sub x] (x=0–0.15) during 0.75-keV argon Ar-ion etching, by deep level transient spectroscopy. These defects are compared to those introduced during e-beam deposition of metal...

  • Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals. Bletskan, D. I.; Madyar, J. J.; Kabaciy, V. N. // Semiconductors;Feb2006, Vol. 40 Issue 2, p137 

    The polarization photoconductivity spectra of Bi-doped nonstoichiometric GeSe layered crystals grown by static sublimation were investigated. Two strongly polarized maxima at the photon energies hνmax = 1.35 eV ( E ∥ a) and 1.44 eV ( E∥ b) due to the V → V and Δ →...

  • Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions. Sun, G.; Cheng, H. H.; Menéndez, J.; Khurgin, J. B.; Soref, R. A. // Applied Physics Letters;6/18/2007, Vol. 90 Issue 25, p251105 

    The authors propose a Ge/Ge0.76Si0.19Sn0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a “clean” offset of 150 meV situated below other energy valleys (Γ,X). The entire structure is strain-free because the lattice-matched Ge...

  • Increase of island density via formation of secondary ordered islands on pit-patterned Si (001) substrates. Zhong, Z.; Schmidt, O. G.; Bauer, G. // Applied Physics Letters;9/26/2005, Vol. 87 Issue 13, p133111 

    Site-controlled groups of Ge islands are grown on pit-patterned Si (001) substrates. By varying the deposited amount of Ge, we find that the growth starts with the formation of a single island at the pit bottom and then proceeds to the formation of a highly symmetric Ge island group around the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics