TITLE

Raman spectroscopy of carbon-induced germanium dots

AUTHOR(S)
Guedj, C.; Beyer, A.; Mu¨ller, E.; Gru¨tzmacher, D.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1742
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Raman spectroscopy is used to study C and Ge diffusion in multilayers of C-induced Ge dots deposited on Si(100). The initial Ge content is fixed to 2 ML and the C precoverage varied from 0.1 to 0.3 ML. The resulting concentration of isolated substitutional C atoms depends on the C precoverage and the thermal annealing performed after growth. C atoms are mostly localized in the areas around the dots, due to the repulsive Ge-C interaction. When C is added, the interface around the burried dots becomes sharper, and less Ge alloying occurs. C mainly increases the strain contrast around the dots and induces a strain-enhanced Ge interdiffusion, even at 650 °C. At 800 °C, Ge and C interdiffuse simultaneously. © 2001 American Institute of Physics.
ACCESSION #
4710890

 

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