TITLE

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

AUTHOR(S)
Paranthoen, C.; Bertru, N.; Dehaese, O.; Le Corre, A.; Loualiche, S.; Lambert, B.; Patriarche, G.
PUB. DATE
March 2001
SOURCE
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1751
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A procedure of InAs/InP quantum dots elaboration emitting at 1.55 μm by gas source molecular beam epitaxy is described. It is based on a modification of the capping layer growth which is deposited in two steps, separated by a growth interruption under phosphorus flux. The main effect of this two step capping layer growth is to reduce the height of the biggest islands and thus to decrease the photoluminescence linewidth of the quantum dots emission line. Transmission electron microscopy and photoluminescence experiments show that quantum dots structure are still present after growth interruption under phosphorus flux and that the photoluminescence linewidth at 1.55 μm is reduced from 120 to 50 meV, thanks to this procedure. © 2001 American Institute of Physics.
ACCESSION #
4710887

 

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