Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodes

Huh, Chul; Kim, Sang-Woo; Kim, Hyun-Soo; Kim, Hyun-Min; Hwang, Hyunsang; Park, Seong-Ju
March 2001
Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1766
Academic Journal
The results of the sulfur treatment of multiple-quantum-well (MQW) light-emitting diodes (LEDs) with (NH[sub 4])[sub 2]S and (NH[sub 4])[sub 2]S+t-C[sub 4]H[sub 9]OH solutions prior to the deposition of a light-transmitting p-electrode metal are presented. The room-temperature I-V curves showed that the forward voltages of MQW LEDs treated with the two sulfur solutions decrease by 0.12 and 0.35 V at 20 mA, respectively, compared to the untreated MQW LED, as the result of an improvement in p-Ohmic contact characteristics. The relative light-output power and external quantum efficiency of MQW LEDs increased by a factor of 1.28 for the (NH[sub 4])[sub 2]S treated sample and 2.23 for the (NH[sub 4])[sub 2]S+t-C[sub 4]H[sub 9]OH treated sample compared to the untreated sample. In addition, the reverse leakage current characteristic of MQW LEDs was reduced as a result of sulfur treatment. This can be attributed to the passivation of surface and sidewall damages formed after the dry-etching process for a reliable pattern transfer. The present results indicate that the sulfur treatment greatly improves the electrical and optical performance of MQW LEDs. © 2001 American Institute of Physics.


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