Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition

Pozina, G.; Edwards, N. V.; Bergman, J. P.; Paskova, T.; Monemar, B.; Bremser, M. D.; Davis, R. F.
February 2001
Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1062
Academic Journal
Temperature-dependent time-resolved photoluminescence measurements were performed on GaN film/AlN buffer/6H-SiC substrate heterostructures grown by metalorganic chemical vapor deposition. The overlying GaN layers were under tension, as estimated from the free A exciton (FE[sub A]) position. The recombination lifetimes were determined for the FE[sub A] and for the neutral-donor-bound exciton (D[sub 0]X). We observed that the recombination lifetime for the FE[sub A] has the same value of 40-50 ps in all the layers, whereas the recombination time for the D[sub 0]X varies for different samples. We observed that the recombination lifetimes for D[sub 0]X have a clear dependence on the position of FE[sub A], i.e., the recombination lifetime increases with decreasing strain in the layers. We discuss the results in term of the hole states involved in the donor-bound exciton recombination. © 2001 American Institute of Physics.


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