TITLE

Spike annealing of boron-implanted polycrystalline-silicon on thin SiO[sub 2]

AUTHOR(S)
Fiory, A. T.; Bourdelle, K. K.; Roy, P. K.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1071
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Spike thermal annealing is examined for electrical activation of B implants into 100 nm Si films deposited over 1.5 to 2.4 nm thermally grown SiO[sub 2]. These structures simulate gate stacks in advanced p-type metal-oxide-Si (PMOS) devices. Spike anneals, at minimized thermal budget, are shown to yield higher carrier concentrations in PMOS polycrystalline-silicon (poly-Si), as compared to conventional rapid thermal annealing. The activation energy for B diffusion through SiO[sub 2] is found to be 3.71 to 3.83 eV and near that previously reported for furnace anneals. Boron penetration appears unaffected by photoexcitation from heating lamps. © 2001 American Institute of Physics.
ACCESSION #
4710851

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics