Observation of crossing pores in anodically etched n-GaAs

Langa, S.; Carstensen, J.; Christophersen, M.; Fo¨ll, H.; Tiginyanu, I. M.
February 2001
Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1074
Academic Journal
Pores in GaAs in the micrometer range and oriented in <111> directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very promising feature for three-dimensional micro- and nanostructuring of III-V compounds for the production of photonic materials. © 2001 American Institute of Physics.


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