Synthesis of InN[sub x]P[sub 1-x] thin films by N ion implantation

Yu, K. M.; Walukiewicz, W.; Wu, J.; Beeman, J. W.; Ager, J. W.; Haller, E. E.; Shan, W.; Xin, H. P.; Tu, C. W.
February 2001
Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1077
Academic Journal
Dilute InN[sub x]P[sub 1-x] alloy thin films were synthesized by nitrogen ion implantation into InP using doses corresponding to N mole fraction up to 0.048. In the films with the highest N contents, it was shown using modulated photoreflectance that the fundamental band gap energy was decreased by up to 180 meV. The band gap reduction is similar in magnitude to that observed in epitaxially grown III-N[sub x]V[sub 1-x] alloys. The InN[sub x]P[sub 1-x] layers were thermally stable up to an annealing temperature of 850 °C. Using the recently developed band anticrossing model which relates the band gap reduction to the N content, we estimate that the maximum mole fraction of N achieved in the InN[sub x]P[sub 1-x] alloys is larger than that reported previously for film grown by chemical vapor deposition and exceeds 0.01. © 2001 American Institute of Physics.


Related Articles

  • Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy. Wang, W.; Bowen, W.; Spanninga, S.; Lin, S.; Phillips, J. // Journal of Electronic Materials;Jan2009, Vol. 38 Issue 1, p119 

    Oxygen incorporation into ZnTe was studied using pulsed laser deposition and molecular beam epitaxy. Oxygen incorporation at the high partial pressures studied for pulsed laser deposition was found to result in increasing visible transparency with oxygen incorporation, and is attributed to the...

  • Relaxation measurements and particle size determination in Co–Ag heterogeneous alloy films. Slade, S. B.; Parker, F. T.; Berkowitz, A. E. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p6613 

    Provides information on a study which investigated the magnetic properties of dilute cobalt-silver heterogeneous alloy films to test the Néel model of magnetic relaxation. Experimental procedure; Direct current magnetic measurements; Conclusion.

  • Magnetotransport properties of (Ga, Mn)Sb. Matsukura, F.; Abe, E.; Ohno, H. // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p6442 

    The preparation of dilute alloy of GaSb and Mn, (Ga, Mn)Sb, with a few percent of Mn by molecular beam epitaxy and its magnetotransport properties are reported. Magnetotransport measurements show a pronounced anomalous Hall effect and negative magnetoresistance below 50 K. The results suggest...

  • Properties of dilute InAsN layers grown by liquid phase epitaxy. Dhar, S.; Das, T. D.; de la Mare, M.; Krier, A. // Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p071905 

    We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N∼0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the...

  • Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy. Green, R.P.; Krysa, A.; Roberts, J.S.; Revin, D.G.; Wilson, L.R.; Zibik, E.A.; Ng, W.H.; Cockburn, J.W. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1921 

    We report the room-temperature operation of λ≈8.5 μm InGaAs/AlInAs quantum cascade lasers, grown by low-pressure metalorganic vapor phase epitaxy. The necessary control of interfacial abruptness and layer thicknesses was achieved by the use of individually purged vent/run valves and...

  • Analysis of switching transients in KNO3 ferroelectric memories. Araujo, C.; Scott, J. F.; Godfrey, R. Bruce; McMillan, L. // Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1439 

    We have measured the switching current transient i(t) versus time for 75-nm-thick KNO3 nonvolatile memories having address voltages of 6.3 V and switching times 20–30 ns. The currents are minimum (nearly zero) at t=0 and exhibit a symmetric shape about their maxima at 23±2 ns. This is...

  • Galvanomagnetic effect in AlGaAs/GaAs heterostructures grown by organometallic vapor phase epitaxy. Aina, Leye; Mattingly, Mike; Pande, Krishna // Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p865 

    A new galvanomagnetic effect in AlGaAs/GaAs heterostructures is described. The Hall coefficient of such structures is shown to decrease with the magnetic field in a low field regime where magnetoresistive effects are negligible. The effect is explained in terms of two-band conduction in the...

  • Liquid phase epitaxy of Pb1-xEuxTe thin films. Hacham, A.; El-Hanany, U.; Rotter, S.; Shapira, Yoram // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p108 

    Epitaxial layers of Pb1-xEuxTe with x<0.06 have been grown for the first time using liquid phase epitaxy. The epitaxy was done from Te-rich solutions since the commonly used Pb solutions, which exothermally form Pb-Eu intermetallics, cannot be used to grow this compound. The basic growth...

  • Etching and cathodoluminescence studies of ZnSe. Clausen, E. M.; Craighead, H. G.; Tamargo, M. C.; de Miguel, J. L.; Schiavone, L. M. // Applied Physics Letters;8/22/1988, Vol. 53 Issue 8, p690 

    Epitaxial thin films of ZnSe grown on GaAs substrates were reactive ion etched using BCl3 /Ar gas mixtures. Using an optimized etching process, photolithographically defined micrometer sized structures were etched several micrometers deep with straight sidewalls and smooth surfaces....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics