Initial stages of molecular-beam epitaxy growth of GaN on 6H-SiC(0001)

Lu, J.; Haworth, L.; Westwood, D. I.; Macdonald, J. E.
February 2001
Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1080
Academic Journal
We studied the atomic H etching of 6H-SiC substrates and the initial stages of GaN/6H-SiC molecular-beam epitaxy growth. Atomic H etched 6H-SiC(0001)[sub Si] and (0001¯)[sub C] surfaces show a (&sqrt3;x&sqrt3;)-R30° and a (1x1) reconstruction respectively, with 0.7±0.2 monolayers of remnant O on both surfaces. GaN/6H-SiC(0001)[sub Si] growth is initiated by the formation of islands that develop into flat-top terraces through coalescence. Growth steps of one or integer numbers of the GaN atomic bilayer height are observed. GaN grown on 6H-SiC(0001¯)[sub C] is rougher with islands of irregular shape. X-ray photoemission spectroscopy studies show that Si 2p and C 1s photoelectron inelastic mean free paths in GaN are 22±1 and 20±1 Å, respectively. © 2001 American Institute of Physics.


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