Recombination lifetimes in undoped, low-band gap InAs[sub y]P[sub 1-y]/In[sub x]Ga[sub 1-x]As double heterostructures grown on InP substrates

Ahrenkiel, R. K.; Johnston, S. W.; Webb, J. D.; Gedvilas, L. M.; Carapella, J. J.; Wanlass, M. W.
February 2001
Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1092
Academic Journal
High-quality, thin-film, lattice-matched (LM) InAs[sub y]P[sub 1-y]/In[sub x]Ga[sub 1-x]As double heterostructures (DHs) have been grown lattice mismatched on InP substrates using atmospheric-pressure metalorganic vapor-phase epitaxy. The low-band gap In[sub x]Ga[sub 1-x]As layers in the DHs have room-temperature band gaps that range from 0.47 to 0.6 eV. Both the optical and electronic properties of these films have been extensively measured. The band-to-band photoluminescence is quite strong and comparable to that found for LM InP/In[sub 0.53]Ga[sub 0.47]As DHs grown on InP. Recombination lifetime measurements of undoped DH structures show minority-carrier lifetimes in excess of 1 μs in most cases. The earlier properties make the band gap-flexible InAs[sub y]P[sub 1-y]/In[sub x]Ga[sub 1-x]As DH system attractive for applications in high-performance, infrared-sensitive devices. © 2001 American Institute of Physics.


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