Structural and magnetoresistance properties of La[sub 2/3]Ca[sub 1/3]MnO[sub 3] thin films on buffered silicon substrates

Kumar, D.; Chattopadhyay, S.; Gilmore, Walter M.; Lee, C. B.; Sankar, J.; Kvit, A.; Sharma, A. K.; Narayan, J.; Pietambaram, S. V.; Singh, Rajiv K.
February 2001
Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1098
Academic Journal
We report an epitaxial growth of LCMO (La[sub 2/3]Ca[sub 1/3]MnO[sub 3]) film on Si by using a highly conducting diffusion barrier layer of TiN. In order to achieve epitaxial growth of LCMO films, MgO, and SrTiO[sub 3] films were used as intermediate layers between LCMO and TiN layers. The results have indicated that the properties of LCMO films on Si substrates, deposited under an optimized condition, are on par with the properties of LCMO films on conventional oxide substrates such as LaAlO[sub 3] and SrTiO[sub 3] in terms of paramagnetic to ferromagnetic transition temperature, insulator to metal transition temperature, and magnetoresistance ratio. © 2001 American Institute of Physics.


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