TITLE

Evolution of barrier asymmetry in magnetic tunnel junctions

AUTHOR(S)
Bru¨ckl, H.; Schmalhorst, J.; Reiss, G.; Gieres, G.; Wecker, J.
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Magnetic tunnel junctions usually consist of different layer stacks at the two sides of the tunneling barrier. The exposure of these junctions to high temperatures thus can induce large asymmetries in the electronic potential with respect to the barrier. Using the example of Co/Cu/Co/Al[sub 2]O[sub 3]/Co tunnel junctions, we show that the measured current/voltage characteristics develop a large asymmetry upon annealing at a temperature larger than 230 °C. This is accompanied by a Cu enrichment at one side of the barrier and cannot be explained by simply using the work function differences between the electrode materials. Thus, a Cu-Al[sub 2]O[sub 3] intermixing zone at the barrier interface must be taken into account, which leads to an asymmetric step-like barrier shape. The interpretation is supported by numerical evaluation of model barriers which reproduce the experimental asymmetries if an intermixing zone of only 0.2 nm thickness is assumed. © 2001 American Institute of Physics.
ACCESSION #
4710835

 

Related Articles

  • Field-Dependent Photosensitivity of In�SiO[sub 2]�Cd[sub 0.28]Hg[sub 0.72]Te Metal�Insulator�Semiconductor Structures with an Opaque Field Electrode. Vasil�ev, V. V.; Kravchenko, A. F.; Mashukov, Yu. P. // Semiconductors;Sep2002, Vol. 36 Issue 9, p993 

    The study of the photosensitivity of an In-SiO[sub 2]-Cd[sub 0.28]Hg[sub 0.72]Te metal-insulator-semiconductor structure with an opaque electrode is continued and the results are reported in this paper. The effect of a drastic decrease in photosensitivity with increasing inversion voltage is...

  • Additional Coulomb blockade and negative differential conductance in closed two-dimensional... Shin, Mincheol; Lee, Seongjae // Journal of Applied Physics;9/1/1998, Vol. 84 Issue 5, p2974 

    Investigates the transport properties of a two dimensional array of small tunnel junctions having different paths from the source to the drain electrodes. Coulomb interaction with the electrodes at zero temperature; Behavior of electrons in this interaction; Effect of array imperfection on on...

  • Spin-dependent conductance minima in magnetic tunnel junctions. Xiang, X.H.; Zhu, T.; Landry, G.; Du, J.; Yuwen Zhao; Xiao, John Q. // Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2826 

    We present a study on the positions of conductance minima for the parallel and antiparallel magnetization configurations in magnetic tunnel junctions, both experimentally and theoretically. It is found that the conductance minima can have as much as a 100-mV shift from zero bias, and the shifts...

  • Inelastic resonance tunneling in S�Sm�S tunnel structures. Devyatov, I. A.; Kupriyanov, M. Yu. // JETP Letters;1/25/97, Vol. 65 Issue 2, p171 

    Inelastic resonance tunneling through junctions with an amorphous interlayer and superconducting electrodes is studied. The form of the current�voltage characteristic I(V) at low temperature and the temperature dependence of the conductance G(0) at low bias are calculated and are found to...

  • STJ X-ray detectors with killed electrode. Andrianov, V. A.; Dmitriev, P. N.; Koshelets, V. P.; Kozin, M. G.; Romashkina, I. L.; Sergeev, S. A. // AIP Conference Proceedings;2002, Vol. 605 Issue 1, p161 

    Tunnel junctions Al(0)/Nb/Al(1)/AlO[sub x]/Al(2)/Nb/NbN with bottom electrode Al(0)/Nb/Al(1) as a killed electrode were studied at temperatures 1.35 and 0.3 K. It was found that at T=0.3 K tunneling from the killed electrode, absent at T=1.35 K, appeared. It increases the detector signal and...

  • n-type amorphous (or microcrystalline) silicon/p-type crystalline silicon heterojunction electrodes for efficient and stable solar-to-chemical conversion. Ueda, Keiichi; Nakato, Yoshihiro; Sakai, Yuichi; Matsumura, Michio; Tsubomura, Hiroshi // Journal of Applied Physics;8/1/1988, Vol. 64 Issue 3, p1513 

    Presents a study which examined the photovoltaic characteristics of plutonium-coated n-type amorphous silicon/p-type crystalline silicon heterojunction electrodes. Experimental details; Results; Discussion.

  • The influence of base bias on the collector photocurrent for InGaP/GaAs heterojunction phototransistors. Tan, S. W.; Chen, H. R.; Chen, W. T.; Hsu, M. K.; Lin, A. H.; Lour, W. S. // Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p034502 

    Fabrication, characterization, and theoretical modeling of two-terminal and three-terminal heterojunction phototransistors ( 2T- and 3T-HPTs) based on InGaP/GaAs are reported. For a current–bias 3T-HPT, an independent current flowing into or out of base electrode is employed to modulate...

  • Electrode-dependent electrical properties of metal/Nb-doped SrTiO3 junctions. Park, C.; Seo, Y.; Jung, J.; Kim, D.-W. // Journal of Applied Physics;Mar2008, Vol. 103 Issue 5, p054106 

    In this study, we discuss the electrical properties of junctions consisting of metal electrodes and Nb-doped SrTiO3(001) single crystals. The junctions formed with large work function metals (Ni, Au, Pd, and Pt) resulted in rectifying transport. A hysteretic feature was observed in the current...

  • Adaptive semiconductor/electrocatalyst junctions in water-splitting photoanodes. Lin, Fuding; Boettcher, Shannon W. // Nature Materials;Jan2014, Vol. 13 Issue 1, p81 

    High-efficiency photoelectrochemical water-splitting devices require the integration of electrocatalysts (ECs) with light-absorbing semiconductors (SCs), but the energetics and charge-transfer processes at SC/EC interfaces are poorly understood. We fabricate model EC-coated single-crystal TiO2...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics