TITLE

Ferroelectric properties of alkoxy-derived CaBi[sub 4]Ti[sub 4]O[sub 15] thin films on Pt-passivated Si

AUTHOR(S)
Kato, Kazumi; Suzuki, Kazuyuki; Nishizawa, Kaori; Miki, Takeshi
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1119
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
CaBi[sub 4]Ti[sub 4]O[sub 15] (CBTi144) thin films were prepared by spin coating a precursor solution of metal alkoxides. As-deposited thin films began crystallization below 550 °C and reached full crystallinity of a single phase of layered perovskite at 650 °C via rapid thermal annealing in oxygen. The 650 °C annealed CBTi144 thin film showed random orientation on Pt-passivated Si substrate and exhibited P-E hysteresis loops. The remanent polarization (P[sub r]) and coercive electric field (E[sub c]) were 9.4 μC/cm[sup 2] and 106 kV/cm, respectively, at 11 V. The dielectric constant and loss factor were 300 and 0.033, respectively, at 100 kHz. © 2001 American Institute of Physics.
ACCESSION #
4710833

 

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