TITLE

Characterization of RuO[sub 2] electrodes on Zr silicate and ZrO[sub 2] dielectrics

AUTHOR(S)
Zhong, Huicai; Heuss, Greg; Misra, Veena; Luan, Hongfa; Lee, Choong-Ho; Kwong, Dim-Lee
PUB. DATE
February 2001
SOURCE
Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1134
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The rutile stoichiometric phase of RuO[sub 2], deposited via reactive sputtering, was evaluated as a gate electrode on chemical vapor deposited ZrO[sub 2] and Zr silicate for Si-p-type metal-oxide-semiconductor (PMOS) devices. Thermal and chemical stability of the electrodes was studied at annealing temperatures of 400, 600, and 800 °C in N[sub 2]. X-ray diffraction was measured to study grain structure and interface reactions. The resistivity of RuO[sub 2] films was 65.0 μΩ cm after 800 °C annealing. Electrical properties were evaluated on MOS capacitors, which indicated that the work function of RuO[sub 2] was ∼5.1 eV, compatible with PMOS devices. Post-RuO[sub 2] gate annealing up to 800 °C, resulted in only a 1.4 Å equivalent oxide thickness (T[sub ox-eq]) change and 0.2 V flatband voltage change for Zr silicate and a 4 Å T[sub ox-eq] change for ZrO[sub 2] dielectrics. Tantalum electrodes were also studied on ZrO[sub 2] as a comparison of the stability of RuO[sub 2] electrodes. © 2001 American Institute of Physics.
ACCESSION #
4710827

 

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