Comment on "Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices" [Appl. Phys. Lett. 76, 586 (2000)]

Yu, Peter Y.
February 2001
Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1160
Academic Journal
Comments on the study entitled 'Optical and acoustic phonon modes is self-organized Ge quantum dot superlattices.' Studies on the Raman scattering spectra of self-organized Ge quantum dot superlattice samples grown by molecular beam epitaxy on Si substrates; Attrubution of both optical and acoustic phonons to the Ge quantum dots; Evidence of confinement effect of Ge optical phonon modes in the quantum dots.


Related Articles

  • Response to "Comment on 'Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices' " [Appl. Phys. Lett. 78, 1160 (2001)]. Liu, J. L.; Jin, G.; Tang, Y. S.; Luo, Y. H.; Wang, K. L.; Yu, D. P. // Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1162 

    Responds to a critique of the study entitled 'Optical and acoustic phonon modes is self-organized Ge quantum dot superlattices.' Explanation to the claims regarding the existence of strong alloying between the Ge dots and Si barrier layers due to the appearance of Se-Ge modes; Evidence of...

  • Coherent Control of Optical-Phonon-Assisted Resonance Secondary Emission in Semiconductor Quantum Dots. Fedorov, A. V.; Baranov, A. V.; Masumoto, Y. // Optics & Spectroscopy;Jul2002, Vol. 93 Issue 1, p52 

    A new optical effect, the coherent control of spontaneous secondary emission with the participation of optical phonons in systems with discrete spectra of electronic transitions, is studied theoretically. Analytical formulas are obtained that describe the time-integrated signals of secondary...

  • Time-Resolved Optical-Phonon Emission and Electron-Hole Relaxation Dynamics in ZnCdTe Quantum Wells and Quantum Dots. Gilliot, P.; Cronenberger, S.; Viale, Y.; Gallart, M.; Hönerlage, B.; Kheng, K.; Mariette, H. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p631 

    We present a study of ZnCdTe quantum dots (QDs) embedded in Zn-rich ZnCdTe quantum wells (QWs). Using a time-resolved pump and probe technique, we determine the population dynamics of excitons at low temperature. We analyse first the optical-phonon emission-cascade in QWs governing, after...

  • Quantum memories. Simon, C.; Afzelius, M.; Appel, J.; de la Giroday, A. Boyer; Dewhurst, S. J.; Gisin, N.; Hu, C. Y.; Jelezko, F.; Kröll, S.; Müller, J. H.; Nunn, J.; Polzik, E. S.; Rarity, J. G.; De Riedmatten, H.; Rosenfeld, W.; Shields, A. J.; Sköld, N.; Stevenson, R. M.; Thew, R.; Walmsley, I. A. // European Physical Journal D -- Atoms, Molecules, Clusters & Opti;Jun2010, Vol. 58 Issue 1, p1 

    We perform a review of various approaches to the implementation of quantum memories, with an emphasis on activities within the quantum memory sub-project of the EU integrated project “Qubit Applications”. We begin with a brief overview over different applications for quantum memories...

  • The fast recovery dynamics of a quantum dot semiconductor optical amplifier. Erneux, Thomas; Viktorov, Evgeny A.; Mandel, Paul; Piwonski, Tomasz; Huyet, Guillaume; Houlihan, John // Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p113501 

    We consider a rate equation model of a quantum dot semiconductor optical amplifier that takes into account carrier capture, escape, and Pauli blocking processes. We evaluate possible differences between phonon-assisted or Auger processes being dominant for recovery. An analytical solution which...

  • Temperature dependence of the photoluminescence emission from thiol-capped PbS quantum dots. Turyanska, L.; Patanè, A.; Henini, M.; Hennequin, B.; Thomas, N. R. // Applied Physics Letters;3/5/2007, Vol. 90 Issue 10, p101913 

    The authors report the temperature dependence of the near-infrared photoluminescence (PL) emission from thiol-capped PbS quantum dots. The high thermal stability of the PL allows the authors to study the thermal broadening of the dot emission over an extended temperature range (4–300 K)....

  • Resonant optical excitation of longitudinal-optical phonons and intermixing in InAs/AlAs single quantum dots. Sarkar, D.; van der Meulen, H. P.; Calleja, J. M.; Meyer, J. M.; Haug, R. J.; Pierz, K. // Applied Physics Letters;5/5/2008, Vol. 92 Issue 18, p181909 

    Excitations of a single InAs/AlAs self-assembled quantum dot were investigated by photoluminescence excitation spectroscopy. Resonant absorption by longitudinal-optical (LO) phonons of the quantum dot and the barriers is observed. In particular, a resonance at 41 meV is attributed to the...

  • Formation of coupled three-dimensional GeSi quantum dot crystals. Ma, Y. J.; Zhong, Z.; Lv, Q.; Zhou, T.; Yang, X. J.; Fan, Y. L.; Wu, Y. Q.; Zou, J.; Jiang, Z. M. // Applied Physics Letters;4/9/2012, Vol. 100 Issue 15, p153113 

    Coupled three-dimensional GeSi quantum dot crystals (QDCs) are realized by multilayer growth of quantum dots (QDs) on patterned SOI (001) substrates. Photoluminescence spectra of these QDCs show non-phonon (NP) recombination and its transverse-optical (TO) phonon replica of excitons in QDs. With...

  • Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector. Jin, C. Y.; Ohta, S.; Hopkinson, M.; Kojima, O.; Kita, T.; Wada, O. // Applied Physics Letters;4/12/2010, Vol. 96 Issue 15, p151104 

    We have investigated the carrier tunneling process in a quantum-dot (QD) tunnel injection structure, which employs a GaAs1-xNx quantum well (QW) as a carrier injector. The influence of the barrier thickness between the GaAs1-xNx well and InAs dot layer has been studied by temperature-dependent...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics