Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

Nishida, Toshio; Saito, Hisao; Kobayashi, Naoki
June 2001
Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p3927
Academic Journal
By introducing a single-quantum-well active layer and a high-Al-content carrier blocking layer, the output power of an AlGaN-based ultraviolet light-emitting diode has been improved by one order of magnitude. Optical output of 1 mW was achieved at the emission peak wavelength of 341-343 nm. © 2001 American Institute of Physics.


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