TITLE

Chirp reduction in semiconductor lasers through injection current patterning

AUTHOR(S)
Dokhane, N.; Lippi, G. L.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p3938
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The introduction of patterned current fronts that modulate the transition between directly modulated optical bits allows for a strong reduction of the optical chirp in a single-mode semiconductor laser, as shown in the numerical integration of a standard model. Hence, optical transmission of information over much longer distances without signal deterioration and a substantial increase in data transmission speed are possible. © 2001 American Institute of Physics.
ACCESSION #
4710809

 

Related Articles

  • Effect of intensity noise of semiconductor lasers on the digital modulation characteristics and the bit error rate of optical communication systems. Ahmed, Moustafa; Yamada, Minoru // Journal of Applied Physics;Jul2008, Vol. 104 Issue 1, p013104 

    This paper presents theoretical evaluation of the digital modulation performance of semiconductor lasers in digital communication systems with gigabit rates. The study is based on numerical integration of the rate equations augmented by a nonreturn-to-zero (NRZ) bit generator. For solitary...

  • When dhrystone leaves you high and dry. Mann, Daniel; Cobb, Paul // EDN;05/21/98, Vol. 43 Issue 11, p117 

    Offers information on Dhrystone programs which provide a convenient numeric output. What the output reveals; Problems associated with the program; Results of tests on the program. INSETS: Use of the geometric mean;How would you like your benchmark results cooked, sir?;The EEMBC solution;How...

  • Analysis of the far-field output angle scanning by injection locking of a diode laser array. Weber, Jean-Pierre; Wang, Shyh // Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1719 

    We present a linear theory to explain the experimentally observed emission angle scanning of an injection-locked diode laser array when the frequency of the injected light is changed. This theory is based on eigenmode analysis of the coupled waveguides and on the use of the antenna array theory...

  • V-grooved inner-stripe laser diodes on a p-type substrate operating over 100 mW at 1.5 μm wavelength. Horikawa, H.; Oshiba, S.; Matoba, A.; Kawai, Y. // Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p374 

    An output power of 110 mW cw has been achieved with a V-grooved inner-stripe laser diode on a p-type substrate emitting at 1.5 μm wavelength. Output powers over 100 mW could be obtained by determining the appropriate cavity length and the reflectivity of the front mirror facet, a parameter...

  • Multi-photon pumping in a large band gap semiconductor laser. Liu, C.S.; Tripathi, V.K. // Journal of Applied Physics;1/1/1998, Vol. 83 Issue 1, p15 

    Presents a study which looks at multi-photon pumping in a large band gap semiconductor laser. Detailed information on the methodology used to conduct the study; Discussion based on the results of the study.

  • Semiconductor laser achieves record single-mode fiber-coupling efficiency.  // Laser Focus World;Mar94, Vol. 30 Issue 3, p9 

    Reports that researchers in Lexington, Massachusetts have coupled more that 1 W of 974 nanometer output from two copropagaing lasers into a single-mode fiber using semiconductor pump lasers. Fiber-coupling efficiency; Pumping of an erbium-doped fiber amplifier.

  • Shortest-wavelength blue semiconductor laser reported.  // Laser Focus World;Dec94, Vol. 30 Issue 12, p9 

    Reports on the development of a semiconductor laser with a wave-length of 463 nm at the Brown University in Providence, Rhode island. Features of the laser.

  • The future looks bright for high-power semiconductor lasers. Anderson, Stephen G. // Laser Focus World;Dec94, Vol. 30 Issue 12, p63 

    Focuses on the applications of high-power semiconductor lasers. Features of semiconductor lasers; Use of the output of diode lasers to pump a solid material; Research on the applications of semiconductor lasers.

  • Indium arsenide device provides mid-IR output. Anderson, Stephen G. // Laser Focus World;Apr95, Vol. 31 Issue 4, p18 

    Features the high-power mid-infrared semiconductor lasers demonstrated by scientists at Hughes Research Laboratories and MIT Lincoln Laboratory. Material structure; Laser sources.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics