Polarity dependence of hexagonal GaN films on two opposite c faces of Al[sub 2]O[sub 3] substrate

Han, Peide; Wang, Zhanguo; Duan, Xiaofeng; Zhang, Ze
June 2001
Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p3974
Academic Journal
GaN films were grown in pairs on two opposite c faces of Al[sub 2]O[sub 3] substrate by low-pressure metal-organic vapor phase epitaxy, and studied by scanning electron microscopy and converged beam electron diffraction. It is found that GaN film on the c-Al[sub 2]O[sub 3] whose c face is forward to its crystal seed has [0001] polarity, and the other film on the c-Al[sub 2]O[sub 3] whose c face is backward to its crystal seed has [0001¯] polarity. © 2001 American Institute of Physics.


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