Theoretical study of sulfur-hydrogen-vacancy complex in diamond

Miyazaki, Takehide; Okushi, Hideyo; Uda, Tsuyoshi
June 2001
Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p3977
Academic Journal
We present an ab initio study of sulfur (S)-hydrogen (H)-vacancy (V) complexes in diamond. An S-H-V defect may become a much shallower donor than an isolated substitutional S defect when S in the complex is either three or five connected. Upon annealing the S-doped crystal, preferential formation of other deep-level defects would deactivate the shallow S-complex donors. © 2001 American Institute of Physics.


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