Identification of refractory-metal-free C40 TiSi[sub 2] for low temperature C54 TiSi[sub 2] formation

Li, K.; Chen, S. Y.; Shen, Z. X.
June 2001
Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p3989
Academic Journal
A refractory-metal-free C40 TiSi[sub 2] phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi[sub 2] has a hexagonal structure with the space group P6[sub 2]22 (180) and lattice parameters a=0.471 nm and c=0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi[sub 2] can be directly achieved from C40 TiSi[sub 2] at low temperatures (600-700 °C). This observation suggests that pulsed-laser annealing is promising for extension of TiSi[sub 2] into the subquarter micron region in semiconductor device fabrication. © 2001 American Institute of Physics.


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