Coulomb glass origin of defect-induced dielectric loss in thin-film oxides

Fleming, R. M.; Varma, C. M.; Lang, D. V.; Jones, C. D. W.; Steigerwald, M. L.; Kowach, G. R.
June 2001
Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p4016
Academic Journal
The dielectric loss in amorphous, thin-film oxide insulators produces a real part of the ac conductivity σ[sup ′](ω) that scales as ω[sup s] with s∼1. Conventional models explain this frequency dependence by hopping or tunneling of charge between neighboring defect sites. These models fail at low temperatures since they predict that σ[sup ′] should vanish at T=0. We observe that the ac conductivity of Ta[sub 2]O[sub 5], ZnO, and SiO[sub 2] has a nonzero extrapolated value at T=0. We propose that this behavior is consistent with the predictions of a Coulomb glass, an insulator with a random distribution of charged defects. © 2001 American Institute of Physics.


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