Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires

Alén, Benito; Martínez-Pastor, Juan; García-Cristobal, Alberto; González, Luisa; García, Jorge M.
June 2001
Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p4025
Academic Journal
InAs self-assembled quantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires. © 2001 American Institute of Physics.


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