TITLE

Comment on "Reduction of interface-state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing" [Appl. Phys. Lett. 76, 1585 (2000)]

AUTHOR(S)
Afanas'ev, V. V.; Stesmans, A.; Bassler, M.; Pensl, G.; Schulz, M. J.
PUB. DATE
June 2001
SOURCE
Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p4043
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Comments on an article published in the 2001 issue of the periodical 'Applied Physics Letters,' about interface state density reduction in n-type 4H-SiC/SiO[sub 2] metal-oxide-semiconductor structures. Electrical behavior of interfacial dangling-bond centers; Energy spectrum of dangling-bond defects; Passivation of dangling bonds with hydrogen; Electron spin resonance investigations on oxidized SiC.
ACCESSION #
4710772

 

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