Reduced temperature dependence of luminescence from silicon due to field-induced carrier confinement

Lin, Ching-Fuh; Chen, Miin-Jang; Liang, Eih-Zhe; Liu, W. T.; Liu, C. W.
January 2001
Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p261
Academic Journal
Electroluminescence from metal-oxide-semiconductor structures on Si was experimentally found to be much less temperature dependent than photoluminescence of Si. The physical reason is attributed to the field-induced carrier confinement in a small region, which contains much less impurity states, compared to the unconfined region. Thus, electron-hole recombination by radiation emission instead of through highly temperature-dependent impurity states is increased. A proposed model well explains the reduced temperature dependence with the field-induced carrier confinement. © 2001 American Institute of Physics.


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