Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates

Saito, Hideaki; Nishi, Kenichi; Sugou, Sigeo
January 2001
Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p267
Academic Journal
InAs quantum dots (QDs) with a high density of 9x10[sup 10] cm[sup -2] are formed on InAlGaAs layer/InP (311)B substrates. Lasers having five-period stacked InAs QD layers are operated in the ground state (λapprox. 1.6 μm) at room temperature, and the maximal modal gain of the ground state is measured to be 20 cm[sup -1]. We obtained a threshold current density of 380 A/cm[sup 2] at room temperature, and observed the temperature-insensitive threshold current at temperatures from 77 to 220 K. © 2001 American Institute of Physics.


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