Optical properties of GaN grown by hydride vapor-phase epitaxy

Oh, Eunsoon; Lee, S. K.; Park, S. S.; Lee, K. Y.; Song, I. J.; Han, J. Y.
January 2001
Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p273
Academic Journal
High-quality free-standing GaN was obtained by hydride vapor-phase epitaxy (HVPE) growth and the subsequent removal of the sapphire substrates. In the photoluminescence (PL) spectra of the as-grown HVPE-GaN, we observed a strong phonon replica peak for temperatures higher than 80 K. Both the near-band-edge emission and the yellow emission in the cathodoluminescence spectra were inhomogeneous, and correlated with the crystalline structure. With the homoepitaxial regrowth by metal-organic chemical-vapor deposition (MOCVD) in the GaN substrates, these unusual optical properties were no longer observed and the PL peak became sharper than GaN grown by MOCVD on sapphire substrates, indicating that the free-standing GaN is suitable as substrates for the growth of device structures. © 2001 American Institute of Physics.


Related Articles

  • Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy. Geihler, M.; Ramsteiner, M. // Applied Physics Letters;8/7/1995, Vol. 67 Issue 6, p733 

    Examines the optical phonon modes of gallium nitride (GaN) layers grown on gallium arsenide substrates by molecular beam epitaxy. Details on the crystal structure of GaN; Application of GaN to short-wavelength electronic devices; Identification of the phase composition of GaN.

  • Anomalous features in the optical properties of Al[sub 1-x]In[sub x]N on GaN grown by metal organic vapor phase epitaxy. Yamaguchi, Shigeo; Kariya, Michihiko; Nitta, Shugo; Takeuchi, Tetsuya; Wetzel, Christian; Amano, Hiroshi; Akasaki, Isamu // Applied Physics Letters;2/14/2000, Vol. 76 Issue 7 

    We have studied the optical properties of Al[sub 1-x]In[sub x]N thin films grown on GaN by metal organic vapor phase epitaxy. X-ray diffraction analysis of ω and ω-2θ scans showed that both the compositional fluctuation and the degree of crystalline mosaicity increase with increasing...

  • Optical gain and stimulated emission of cleaved cubic gallium nitrite. Holst, J.; Hoffmann, A.; Broser, I.; Schottker, B.; As, D.J.; Schikora, D.; Lischka, K. // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p1966 

    Details the observation of optically excited stimulated emission of c-gallium nitride (GaN) layers grown by molecular-beam epitaxy (MBE). Stimulated emissions; Threshold intensity for excitation of stimulated emission from MBE-grown temperature.

  • Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy. Kuroiwa, R.; Asahi, H.; Asami, K.; Kim, S.-J.; Iwata, K.; Gonda, S. // Applied Physics Letters;11/2/1998, Vol. 73 Issue 18 

    GaN-rich side of GaNP and GaNAs layers is grown at 750 °C by gas-source molecular beam epitaxy. Phase separation is observed for the layers with P and As composition of over 1.5% and 1%, respectively. Photoluminescence (PL) spectra for the non-phase-separated GaNP (P composition: 0.37%) and...

  • Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN. Paskova, T.; Goldys, E. M.; Paskov, P. P.; Wahab, Q.; Wilzen, L.; de Jong, M. P.; Monemar, B. // Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4130 

    The optical emission properties of mass-transport regions of GaN grown by hydride vapor phase epitaxy are studied by cathodoluminescence imaging and spectroscopy. A strong donor-acceptor pair emission is observed from the mass-transport regions. Spatially resolved cathodoluminescence reveals a...

  • Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy. Hamdani, F.; Botchkarev, A. // Applied Physics Letters;1/27/1997, Vol. 70 Issue 4, p467 

    Examines the optical properties of high quality gallium nitride (GaN) grown on ZnO substrates by reactive molecular beam epitaxy. Implications of photoluminescence and reflectivity measurements; Absence of yellow photoluminescence band from the film; Ineffectivity of polarized reflectivity to...

  • Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by... Yamaguchi, Shigeo; Kariya, Michihiko; Nitta, Shugo; Amano, Hiroshi; Akasaki, Isamu // Applied Physics Letters;12/27/1999, Vol. 75 Issue 26, p4106 

    Studies the effects of isoelectronic indium (In) doping on the crystalline and optical properties of gallium nitride (GaN) grown on sapphire with hydrogen or nitrogen carrier gas by metalorganic vapor phase epitaxy. Relationship between lattice constants obtained by x-ray diffraction analysis;...

  • High-reflectivity GaN/GaAIN Bragg mirrors at blue/green wavelengths grown by molecular beam... Langer, R.; Barski, A. // Applied Physics Letters;6/14/1999, Vol. 74 Issue 24, p3610 

    Describes the growth of highly-reflective gallium nitride/gallium aluminum nitride quarter-wave Bragg mirrors at blue/green wavelengths using molecular beam epitaxy. Reflectivity for a mirror centered at 473 nanometer; Structural parameters of the Bragg mirrors; Detailed x-ray diffraction...

  • Influence of rapid thermal annealing on the optical properties of gallium nitride grown by gas-source molecular-beam epitaxy. Li, X. B.; Sun, D. Z.; Zhang, J. P.; Kong, M. Y.; Yoon, S. F. // Applied Physics Letters;2/23/1998, Vol. 72 Issue 8 

    Raman scattering, photoluminescence (PL), and nuclear reaction analysis (NRA) have been employed to investigate the effects of rapid thermal annealing (RTA) on GaN films grown on sapphire (0001) substrates by gas-source molecular-beam epitaxy. The Raman spectra showed the presence of the E[sub...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics