Magnesium incorporation in GaN grown by molecular-beam epitaxy

Ptak, A. J.; Myers, T. H.; Romano, L. T.; Van de Walle, C. G.; Northrup, J. E.
January 2001
Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p285
Academic Journal
A pronounced dependence of Mg incorporation on surface polarity was observed in a series of Mg step-doped epitaxial GaN layers grown by rf-plasma-assisted molecular-beam epitaxy. Incorporation was studied for both (0001), or Ga-polarity and (0001¯) or N-polarity orientations. Up to a factor of 30 times more Mg was incorporated in Ga-polarity layers under certain conditions, as determined by secondary ion mass spectrometry. Measurements indicate surface accumulation of Mg occurs during growth, with stable accumulations of close to a monolayer of Mg on the Ga-polarity surface. The presence of atomic hydrogen during growth significantly increased incorporation of Mg without also incorporating potentially compensating hydrogen. © 2001 American Institute of Physics.


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