TITLE

Low density of defect states in hydrogenated amorphous carbon thin films grown by plasma-enhanced chemical vapor deposition

AUTHOR(S)
Krishna, K. M.; Ebisu, H.; Hagimoto, K.; Hayashi, Y.; Soga, T.; Jimbo, T.; Umeno, M.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p294
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The density of electronic defect states in most forms of amorphous carbon deposited at room temperature is found so far to be very high (10[sup 18]-10[sup 22] spins cm[sup -3]). In this letter, we demonstrate that the radio-frequency plasma-enhanced chemical vapor deposited hydrogenated amorphous carbon (a-C:H) thin film exhibits the lowest spin density of the order of 10[sup 16] cm[sup -3], investigated by using electron spin resonance (ESR) spectroscopy, a very promising reproducible result comparable with high-quality a-Si:H. In addition, the optical gap of a-C:H has been tailored between a wide range, 1.8-3.1 eV. The ESR spectra of all the films reveal a single Lorentzian line whose linewidth ΔH[sub pp] varies strongly with the optical gap. Also, there is a strong dependence of spin density on the optical gap, and we show that this dependency is a direct result of structural changes due to sp[sup 3]/sp[sup 2] carbon bonding network. © 2001 American Institute of Physics.
ACCESSION #
4710757

 

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