SiGe intermixing in Ge/Si(100) islands

Capellini, G.; De Seta, M.; Evangelisti, F.
January 2001
Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p303
Academic Journal
We have applied atomic force microscopy and x-ray photoemission spectroscopy to the study of SiGe intermixing in Ge/Si(100) self-assembled islands. We have quantified the Ge/Si alloying as a function of the deposition temperature in the 500-850 °C range. The Si content inside the islands varies from 0% at 550 °C up to 72% at 850 °C. As a consequence of the reduction of the effective mismatch due to the observed SiGe intermixing, the critical base width for island nucleation increases from 25 nm for T[sub dep]<600 °C up to 270 nm for T[sub dep]=850 °C. © 2001 American Institute of Physics.


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