Acceptor activation of Mg-doped GaN by microwave treatment

Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, Tzong-Liang; Chang, Chung-Ying; Chiang, Chih-Lih; Chang, Chih-Sung; Chen, Tzer-Peng; Huang, Kuo-Hsin
January 2001
Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p312
Academic Journal
A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption. © 2001 American Institute of Physics.


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