Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells

Chuo, Chang-Cheng; Lee, Chia-Ming; Chyi, Jen-Inn
January 2001
Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p314
Academic Journal
Thermal stability of In[sub x]Ga[sub 1-x]N/GaN multiple quantum wells with InN mole fraction of ∼0.23 and ∼0.30 was investigated by postgrowth thermal annealing. Low temperature photoluminescence spectroscopy was employed to determine the temperature dependence of the interdiffusion coefficient of In and Ga in InGaN/GaN quantum wells. The interdiffusion process is characterized by a single activation energy of about 3.4±0.5 eV and governed by vacancy-controlled second-nearest-neighbor hopping. Due to composition inhomogeneity, lower diffusivity is observed at the early stage of thermal annealing. © 2001 American Institute of Physics.


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