Substrate-dependent crystallization and enhancement of visible photoluminescence in thermal annealing of Si/SiO[sub 2] superlattices

Khriachtchev, Leonid; Kilpela¨, Olli; Karirinne, Suvi; Kera¨nen, Jaakko; Lepisto¨, Toivo
January 2001
Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p323
Academic Journal
We study annealing of Si/SiO[sub 2] superlattices on fused quartz and crystalline Si substrates. Under annealing at 1200 °C, the superlattices on Si undergo partial crystallization involving clusterization of Si layers through ultrathin (1 nm) oxide, and visible photoluminescence (∼2.1 eV) strongly increases for the samples with thinner Si layers (<=2.5 nm). The annealed superlattices on quartz exhibit a higher disorder, tensile stress, and weaker visible photoluminescence. The results do not support assignment of the observed visible photoluminescence to quantum confinement in Si crystallites but rather indicate that it originates from Si==O bonds stabilized in the Si/SiO[sub 2] network. © 2001 American Institute of Physics.


Related Articles

  • Photoluminescence processes in Si1-xGex/Si disordered superlattices grown on Si(001) substrate. Wakahara, Akihiro; Kuramoto, Kyosuke // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p392 

    Studies the photoluminesnce (PL) properties of Si1-xGex/Si disordered superlattices. Preparation of the samples; Temperature dependence of integrated PL intensity of the d-SL compared with the o-SL.

  • Enhancement of the photoluminescence intensity in short-period GaAs/AIAs superlattices with... Krylyuk, S.; Korbutyak, D.V.; Litovchenko, V.G.; Hey, R.; Grahn, H.T.; Ploog, K.H. // Applied Physics Letters;5/3/1999, Vol. 74 Issue 18, p2596 

    Deals with the enhancement of the photoluminescence intensity of superlattices with different well and barrier thickness. Method used in inducing the transition of the superlattices from an indirect to a direct energy; Effect of the reduction of barrier thickness on the conduction properties of...

  • Photoluminescence and recombination mechanisms in GaN/Al[sub 0.2]Ga[sub 0.8]N superlattice. Bergman, Leah; Dutta, Mitra; Stroscio, M. A.; Stroscio, M.A.; Komirenko, S. M.; Komirenko, S.M.; Nemanich, Robert J.; Eiting, C.J.; Eiting, C. J.; Lambert, D.J.H.; Lambert, D. J. H.; Kwon, H.K.; Kwon, H. K.; Dupuis, R.D.; Dupuis, R. D. // Applied Physics Letters;4/10/2000, Vol. 76 Issue 15 

    A detailed study of photoluminescence (PL) of GaN(1 nm)/Al[sub 0.2]Ga[sub 0.8]N(3.3 nm) twenty periods superlattice grown via metal-organic chemical vapor deposition is presented. The dependence of the PL emission energy, linewidth, and intensity on temperature, in the low temperature regime, is...

  • Optical properties of annealed CdTe self-assembled quantum dots. Mackowski, S.; Smith, L. M.; Jackson, H. E.; Heiss, W.; Kossut, J.; Karczewski, G. // Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p254 

    We report on the influence of postgrowth thermal annealing on the optical properties of CdTe/ZnTe self-assembled quantum dots (SAQDs). Ultrasharp emission lines in the micro-photoluminescence spectra demonstrate the continued presence of quantum dots (QDs) after annealing. Upon annealing, the...

  • Er[sup 3+] photoluminescence properties of erbium-doped Si/SiO[sub 2] superlattices with subnanometer thin Si layers. Ha, Yong Ho; Kim, Sehun; Moon, Dae Won; Jhe, Ji-Hong; Shin, Jung H. // Applied Physics Letters;7/16/2001, Vol. 79 Issue 3 

    The effect of the Si layer thickness on the Er[sup 3+] photoluminescence properties of the Er-doped Si/SiO[sub 2] superlattice is investigated. We find that the Er[sup 3+] luminescence intensity increases by over an order of magnitude as the Si layer thickness is reduced from 3.6 nm down to a...

  • Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealing. Sengupta, S.; Shah, S.; Ghosh, K.; Halder, N.; Chakrabarti, S. // Applied Physics A: Materials Science & Processing;Apr2011, Vol. 103 Issue 1, p245 

    Morphological and optical properties of MBE-grown single and bilayer InAs/GaAs quantum-dot heterostructure with comparatively larger monolayer coverage (∼3.3 ML) are investigated. As compared to the similar single-layer quantum-dot (SQD) structure, the bilayer quantum-dot (BQD) structure...

  • Optical properties of spherical monodisperse YO-ZnO nanoparticles. Gruzintsev, A.; Dulina, N.; Emel'chenko, G.; Ermolaeva, Yu.; Kudrenko, E.; Tolmachev, A. // Physics of the Solid State;Nov2012, Vol. 54 Issue 11, p2260 

    Based on the developed technique for synthesizing spherical mesoporous particles of yttrium oxide with a size dispersion of 10-15% and methods for infiltrating active components into them, spherical nanocrystalline particles of composition YO-ZnO have been synthesized. The nanocomposite...

  • Optical properties of porous silicon processed in tetraethyl orthosilicate. Len'shin, A.; Kashkarov, V.; Tsipenyuk, V.; Seredin, P.; Agapov, B.; Minakov, D.; Domashevskaya, E. // Technical Physics;Feb2013, Vol. 58 Issue 2, p284 

    We investigate the change in the composition and optical properties of porous silicon (por-Si) obtained by electrochemical etching of a palate made of n-type (111) silicon single crystal under high-temperature annealing and processing in tetraethyl orthosilicate (TEOS). It is shown that TEOS...

  • Band gap broadening and photoluminescence properties investigation in GaO polycrystal. Cheng, Yi; Liang, Hongwei; Shen, Rensheng; Xia, Xiaochuan; Wang, Bo; Liu, Yuanda; Song, Shiwei; Liu, Yang; Zhang, Zhenzhong; Du, Guotong // Journal of Materials Science: Materials in Electronics;Aug2013, Vol. 24 Issue 8, p2750 

    GaO thin films were deposited on c-plane AlO substrates by electron beam evaporation equipment. The effects of post anneal treatment on structure and optical properties of GaO were investigated. The X-ray diffraction (XRD) results of the as-grown and the annealed samples indicated the films...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics