TITLE

Persistent photoconductivity in InGaN/GaN multiquantum wells

AUTHOR(S)
Yang, H. C.; Lin, T. Y.; Chen, Y. F.
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p338
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide a unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations. © 2001 American Institute of Physics.
ACCESSION #
4710741

 

Related Articles

  • Steady state photocurrent and photoluminescence from single quantum wells as a function of... Barnes, J.; Tsui, E.S.M. // Journal of Applied Physics;1/15/1997, Vol. 81 Issue 2, p892 

    Examines the variation with applied bias and temperature of steady state photoluminescence (DCPL) and photoconductivity (DCPC) from a series of gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) single quantum well. Significance of nonradiative recombination in the samples and the quality...

  • Persistent photoconductivity in In[sub x]Al[sub y]Ga[sub 1-x-y]N quaternary alloys. Chen, C. H.; Hang, D. R.; Chen, W. H.; Chen, Y. F.; Jiang, H. X.; Lin, J. Y. // Applied Physics Letters;3/24/2003, Vol. 82 Issue 12, p1884 

    The optical properties of In[sub x]Al[sub y]Ga[sub 1-x-y]N quaternary alloys were investigated by photoconductivity (PC), persistent photoconductivity (PPC), photoluminescence (PL), and photoluminescence excitation (PLE) measurements. Quite interestingly, persistent photoconductivity was...

  • Spatial pattern formation of optically excited carriers in photoconductive switches. Bieler, M.; Hein, G.; Pierz, K.; Siegner, U.; Koch, M. // Applied Physics Letters;8/14/2000, Vol. 77 Issue 7 

    We have spatially resolved the photoluminescence patterns emitted from a GaAs/Al[sub 0.3]Ga[sub 0.7]As quantum well after femtosecond laser excitation for different electric bias fields applied in the plane of the well. These patterns demonstrate substantially different electron-hole dynamics...

  • Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfaces. Droopad, R.; Puechner, R.A. // Applied Physics Letters;4/22/1991, Vol. 58 Issue 16, p1777 

    Studies the optical properties of single strained InGaAs/GaAs quantum wells grown on vicinal GaAs surfaces. Photoluminescence; Density of optically inactive traps; Optical efficiency.

  • The optical processes in AlInP/GaInP/AlInP quantum wells. Ishitani, Yoshihiro; Minagawa, Shigekazu; Kita, Takashi; Nishino, Taneo; Yaguchi, Hiroyuki; Shiraki, Yasuhiro // Journal of Applied Physics;10/15/1996, Vol. 80 Issue 8, p4592 

    Provides information on a study that examined the optical processes in AlInP/GaInP/AlInP quantum wells free from long-range ordering by photoluminescence, photoluminescence excitation and photoreflectance measurements. Methodology of the study; Results and discussion on the study.

  • Band alignments in GalnP/GaP/GaAs/GaP/GalnP quantum wells. Kwok, S.H.; Yu, P.Y.; Uchida, K.; Arai, T. // Applied Physics Letters;8/25/1997, Vol. 71 Issue 8, p1110 

    Examines photoluminescence (PL) in gallium indium phosphide/gallium phosphide/gallium arsenide/gallium phosphide/gallium indium phosphide quantum wells. Observation of quantum well emission from gallium arsenide; Effect of extrapolating the energies of the various inter and intralayer...

  • Optical properties of doped InGaN/GaN multiquantum-well structures. Dalfors, J.; Bergman, J. P. // Applied Physics Letters;5/31/1999, Vol. 74 Issue 22, p3299 

    Studies the optical properties of doped InGaN/GaN multiquantum well structures. Photoluminescence spectra from the structures; Screening of the strain induced piezoelectric field; Dependence of emission energy on carrier concentration.

  • Photoconductivity mechanism of quantum well infrared photodetectors under localized photoexcitation. Ershov, M. // Applied Physics Letters;12/7/1998, Vol. 73 Issue 23 

    The physics of photoconductivity of quantum well infrared photodetectors (QWIPs) under nonuniform illumination across QWIP structure (in the direction normal to QWs plane) is studied theoretically with the use of numerical simulation. Local responsivity is a strong function of a coordinate...

  • Optical properties of Si/Si[sub 0.87]Ge[sub 0.13] multiple quantum well wires. Tang, Y.S.; Wilkinson, C.D.W.; Torres, C.M. Sotomayor; Smith, D.W.; Whall, T.E.; Parker, E.H.C. // Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p497 

    Examines the optical properties of Si/Si[sub 0.87]Ge[sub 0.13] multiple quantum well wires. Use of photoluminescence and photoreflectance to characterize the wires; Occurrence of strain relaxation process; Effects of reduced lateral dimension; Presence of impurities at the heterointerface.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics