Free-standing films of PbSc[sub 0.5]Ta[sub 0.5]O[sub 3] for uncooled infrared detectors

Fuflyigin, V.; Salley, E.; Vakhutinsky, P.; Osinsky, A.; Zhao, J.; Gergis, I.; Whiteaker, K.
January 2001
Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p365
Academic Journal
Highly textured PbSc[sub 0.5]Ta[sub 0.5]O[sub 3] (PST) films were grown on (111) Pt/Si by the sol-gel technique. The PST films were subsequently lifted off the silicon substrate using reactive ion etching. A 40%-50% increase in dielectric constant and pyroelectric coefficient was observed for suspended films compared to those properties of the PST films on a Si substrate. Typical values of the pyroelectric coefficient were measured to be 20-45 nC/(cm2 K) for 200-300 nm thick PST films. The loss tangent values were below 0.02 (at 10 kHz), and the leakage current density was as low as 2-3x10[sup -8] A/cm[sup 2] at 1 V bias. © 2001 American Institute of Physics.


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