Thermal stability of ultrathin ZrO[sub 2] films prepared by chemical vapor deposition on Si(100)

Jeon, T. S.; White, J. M.; Kwong, D. L.
January 2001
Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p368
Academic Journal
As a function of thermal treatment, the chemical stability of ultrathin ZrO[sub 2] films prepared by chemical vapor deposition on a silicon substrate is investigated by x-ray photoelectron spectroscopy. The chemical structure is stable up to 800 °C in both vacuum and N[sub 2] ambient, but a reaction forming zirconium silicide occurs above 900 °C in vacuum. The formation of silicide is accounted for by a reaction mechanism involving a reaction of ZrO[sub 2] with SiO, the latter formed above 900 °C at the interface between Si(100) and the thin layer of SiO[sub 2] formed during growth of the ZrO[sub 2]. © 2001 American Institute of Physics.


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