TITLE

A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (112¯0) face

AUTHOR(S)
Yano, Hiroshi; Hirao, Taichi; Kimoto, Tsunenobu; Matsunami, Hiroyuki
PUB. DATE
January 2001
SOURCE
Applied Physics Letters;1/15/2001, Vol. 78 Issue 3, p374
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
4H-silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors fabricated on both (112¯0) and (0001) faces were characterized at various temperatures. From the temperature dependence of channel mobility, carrier transport in the inversion layer at the SiO[sub 2]/4H-SiC(112¯0) interface was found to be affected by phonon scattering (μ[sub 0]∼T[sup -2.2]), while that at the SiO[sub 2]/4H-SiC(0001) interface was thermally activated (μ[sub 0]∼T[sup 2.6]) due to the decrease of Coulomb scattering by emission of electrons from acceptor-like interface states. From the temperature dependence of threshold voltage, the density of acceptor-like interface states near the conduction band edge seems to be low at the SiO[sub 2]/4H-SiC(112¯0) interface, but quite high (>10[sup 13] cm[sup -2] eV[sup -1]) at the SiO[sub 2]/4H-SiC(0001) interface. The low density of acceptor-like interface states near the conduction band edge on the (112¯0) face should be the primary cause for the high inversion-channel mobility. © 2001 American Institute of Physics.
ACCESSION #
4710725

 

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