Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime

Hofmann, M.; Wagner, A.; Ellmers, C.; Schlichenmeier, C.; Scha¨fer, S.; Ho¨hnsdorf, F.; Koch, J.; Stolz, W.; Koch, S. W.; Ru¨hle, W. W.; Hader, J.; Moloney, J. V.; O'Reilly, E. P.; Borchert, B.; Egorov, A. Yu.; Riechert, H.
May 2001
Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3009
Academic Journal
Optical gain spectra of (GaIn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (GaIn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (GaIn)(NAs)/GaAs at elevated carrier densities. © 2001 American Institute of Physics.


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