Submicron three-dimensional infrared GaAs/Al[sub x]O[sub y]-based photonic crystal using single-step epitaxial growth

Sabarinathan, Jayshri; Bhattacharya, Pallab; Zhu, Donghai; Kochman, Boaz; Zhou, Weidong; Yu, Pei-Chen
May 2001
Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3024
Academic Journal
A relatively simple technique is demonstrated to fabricate three-dimensional face-centered-cubic infrared photonic crystals with submicron feature sizes using GaAs-based technology, single-step epitaxial growth, and lateral wet oxidation. The photonic crystals were fabricated with feature sizes (a) of 1.5 and 0.5 μm. Transmission measurements reveal a stopband centered at 1.0 μm with a maximum attenuation of 10 dB for the submicron (a=0.5 μm) photonic crystal. This technique is scalable to small photonic crystal periodicity and hence to shorter wavelengths. © 2001 American Institute of Physics.


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