Electronic properties of α-Sn(100)2x1: Evidence for asymmetric dimer reconstruction

Cricenti, A.; Perfetti, P.; Barret, N.; Guillot, C.; Aristov, V. Yu.; Le Lay, G.
May 2001
Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3032
Academic Journal
A well-ordered thick layer of α-Sn(100) has been grown on InSb(100). The low energy electron diffraction pattern showed a sharp 2x1 double domain reconstruction with very low background at room temperature. The electronic properties have been studied by core-level- and angle-resolved photoemission spectroscopy (ARPES). ARPES spectra showed the presence of a surface state at normal emission, 1.15 eV below the Fermi level. This state disperses downward 1.3 eV along the [010] direction. Core-level spectra are well fitted with three surface-shifted components at binding energies +0.22, -0.23, and -0.49 eV with respect to the bulk component. Such results are in agreement with theoretical calculations based on asymmetric dimers by [Z.-Y. Lu, G. Chiarotti, S. Scandolo, and E. Tosatti, Phys. Rev. B 58, 13698 (1998)], taking into account final state effects, and exclude the existence of symmetric dimers. © 2001 American Institute of Physics.


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