TITLE

Yellow and green luminescence in a freestanding GaN template

AUTHOR(S)
Reshchikov, M. A.; Morkoc¸, H.; Park, S. S.; Lee, K. Y.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3041
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV and a green luminescence (GL) band at about 2.43 eV. In contrast to epitaxial GaN samples prepared by both vapor-phase and molecular-beam epitaxy, the YL in the sample studied is weak and can be easily saturated. However, the GL is dominant. We attribute the GL to isolated defects involving gallium vacancies and the YL to the same defect, but bound to dislocations, or possibly to structural surface defects. © 2001 American Institute of Physics.
ACCESSION #
4710705

 

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