TITLE

Wetting layer carrier dynamics in InAs/InP quantum dots

AUTHOR(S)
Hinooda, S.; Loualiche, S.; Lambert, B.; Bertru, N.; Paillard, M.; Marie, X.; Amand, T.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3052
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electronic coupling between InAs/InP quantum dot (QD) array and its wetting layer (WL) is studied by continuous wave and time resolved photoluminescence. The carrier dynamics is explained by the existence of two regimes in the WL: at low QD density the carrier dynamics is dominated by the diffusion and at high density when the distance between QDs is comparable to the carrier mean free path in the WL the quantum capture into QDs dominates. From the identification of these two regimes the carrier mean free path in the WL is estimated to about 30 nm. © 2001 American Institute of Physics.
ACCESSION #
4710701

 

Related Articles

  • The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing. Zhou, G. Y.; Chen, Y. H.; Yu, J. L.; Zhou, X. L.; Ye, X. L.; Jin, P.; Wang, Z. G. // Applied Physics Letters;2/14/2011, Vol. 98 Issue 7, p071914 

    For the InAs/GaAs quantum dot (QD) system, the evolution of wetting layer (WL) with InAs deposition thickness has been studied under different postgrowth annealing (PGA) durations using reflectance difference spectroscopy. For the sample without PGA, WL thickness remains constant after the...

  • Different paths to tunability in III-V quantum dots. Leon, R.; Lobo, C.; Clark, A.; Bozek, R.; Wysmolek, A.; Kurpiewski, A.; Kaminska, M. // Journal of Applied Physics;7/1/1998, Vol. 84 Issue 1, p248 

    Provides information on a study examining the tuning quantum dots (QD) dimensions within a fixed ternary composition. Methodology used to conduct the study; Information on the temperature dependencies-nGaAs/GaAs and AllnAs/AlGaAs; Morphology dependence of ground state photoluminescence (PL)...

  • Publisher's Note: "Tuning the external optical feedback-sensitivity of a passively mode-locked quantum dot laser" [Appl. Phys. Lett. 105, 041112 (2014)].  // Applied Physics Letters;9/1/2014, Vol. 105 Issue 9, p1 

    A correction to the article "Tuning the external optical feedback-sensitivity of a passively mode-locked quantum dot laser," by R. Raghunathan, F. Grillot, J.K. Mee, D. Murrell, V. Kovanis and L.F. Lester is presented.

  • Optical characteristics of hexagonal GaN self-assembled quantum dots: Strong influence of built-in electric field and carrier localization. Cho, Yong-Hoon; Kwon, B. J.; Barjon, J.; Brault, J.; Daudin, B.; Mariette, H.; Dang, Le Si // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4934 

    Optical characteristics of hexagonal GaN self-assembled quantum dots (QDs) were systematically studied by photoluminescence (PL), PL excitation (PLE), time-resolved PL, and cathodoluminescence (CL). We observed a Stokes-like shift between PLE absorption edge and PL emission from the GaN QDs as...

  • Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers. Matthews, D. R.; Summers, H. D.; Smowton, P. M.; Hopkinson, M. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4904 

    Using experimental measurements of the gain-current characteristic as a function of temperature in InGaAs quantum-dot lasers, we demonstrate that it is the population of wetting-layer states that leads to a saturation of the population inversion in dot states and hence to the saturation of gain...

  • Optical spectroscopy of single InAs/InGaAs quantum dots in a quantum well. Kaiser, S.; Mensing, T.; Worschech, L.; Klopf, F.; Reithmaier, J. P.; Forchel, A. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4898 

    We have grown self-assembled InAs quantum dots embedded in the center of an InGaAs quantum well by molecular-beam epitaxy. Using electron-beam lithography and wet etching techniques, small mesas with only a few quantum dots were fabricated. At room temperature, the quantum dots have an emission...

  • Optical absorption of intersubband transitions in In[sub 0.3]Ga[sub 0.7]As/GaAs multiple quantum dots. Pattada, B.; Chen, Jiayu; Zhou, Qiaoying; Manasreh, M. O.; Hussein, M. L.; Ma, W.; Salamo, G. J. // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2509 

    Fourier-transform infrared spectroscopy technique was employed to investigate the optical absorption coefficient of intersubband transitions in Si-doped In[sub 0.3]Ga[sub 0.7]As/GaAs multiple quantum dot structures. Waveguides with 45° polished facets were fabricated from molecular beam...

  • Photonic crystal microcavities for cavity quantum electrodynamics with a single quantum dot. Vucˇkovic, Jelena; Yamamoto, Yoshihisa // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2374 

    We propose a planar photonic crystal microcavity design specially tailored for cavity quantum electrodynamics with a single quantum dot emitter embedded in semiconductor. With quality factor up to 45 000, mode volume smaller than a cubic optical wavelength in material, and electric field maximum...

  • Time-resolved dynamics in single InGaN quantum dots. Robinson, James W.; Rice, James H.; Jarjour, Anas; Smith, Jonathan D.; Oliver, Rachel A.; Briggs, Andrew D.; Kappers, Menno J.; Humphreys, Colin J.; Arakawa, Yasuhiko; Taylor, Robert A. // Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2674 

    We present measurements of photoluminescence decay dynamics for single InGaN quantum dots. The recombination is shown to be characterized by a single exponential decay, in contrast to the nonexponential recombination dynamics seen in the two-dimensional wetting layer. The lifetimes of single...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics