Silicoboron-carbonitride ceramics: A class of high-temperature, dopable electronic materials

Ramakrishnan, P. A.; Wang, Y. T.; Balzar, D.; An, Linan; Haluschka, C.; Riedel, R.; Hermann, A. M.
May 2001
Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3076
Academic Journal
The structure and electronic properties of polymer-derived silicoboron-carbonitride ceramics are reported. Structural analysis using radial-distribution-function formalism showed that the local structure is comprised of Si tetrahedra with B, C, and N at the corners. Boron doping of SiCN leads to enhanced p-type conductivity (0.1 Ω[sup -1] cm[sup -1] at room temperature). The conductivity variation with temperature for both SiCN and SiBCN ceramics shows Mott's variable range hopping behavior in these materials, characteristic of a highly defective semiconductor. The SiBCN ceramic has a low, positive value of thermopower, which is probably due to a compensation mechanism. © 2001 American Institute of Physics.


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