TITLE

Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO[sub 2] gate dielectric

AUTHOR(S)
Ngai, T.; Qi, W. J.; Sharma, R.; Fretwell, J. L.; Chen, X.; Lee, J. C.; Banerjee, S. K.
PUB. DATE
May 2001
SOURCE
Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3085
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Silicon and surface-channel SiGe p-metal-oxide-silicon field-effect transistors (p-MOSFETs) using a ZrO[sub 2] gate dielectric with equivalent oxide thickness (EOT) less than 20 Å was fabricated. These p-MOSFETs show similar behavior to that of other high-k gate dielectric p-MOSFETs reported in the literature, and mobility enhancement is observed in the surface-channel SiGe p-MOSFETs. © 2001 American Institute of Physics.
ACCESSION #
4710689

 

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