Picosecond Raman scattering studies of nonequilibrium electron distributions and energy-loss rate in In[sub x]Ga[sub 1-x]As[sub 1-y]N[sub y]

Chen, Y.; Tsen, K. T.
May 2001
Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3094
Academic Journal
Nonequilibrium electron distributions and energy-loss rate in a metal-organic chemical-vapordeposition-grown In[sub x]Ga[sub 1-x]As[sub 1-y]N[sub y] (x=0.03 and y=0.01) epilayer on a GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n≅10[sup 18] cm[sup -3], electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of the excitation laser, the energy-loss rate in In[sub x]Ga[sub 1-x]As[sub 1-y]N[sub y] is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs. © 2001 American Institute of Physics.


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