Atomic equilibrium concentrations in (InGa)As quantum dots

Galluppi, M.; Frova, A.; Capizzi, M.; Boscherini, F.; Frigeri, P.; Franchi, S.; Passaseo, A.
May 2001
Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3121
Academic Journal
In In[sub x]Ga[sub 1-x]As quantum dots (QDs), the plot of peak emission energies versus the total amount of indium exhibits a well defined pattern, which is independent of the indium concentration. Moreover, photoluminescence spectra of InAs QDs grown by atomic layer molecular beam epitaxy (ALMBE) roughly coincide with those of In[sub 0.5]Ga[sub 0.5]As QDs grown by metalorganic vapor phase deposition. We suggest that the total amount of In rather than the nominal In concentration determines the emission energy of these two sets of QDs, and that In interdiffusion is rather strong in ALMBE growth. © 2001 American Institute of Physics.


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