Interface studies of tungsten gate metal-oxide-silicon capacitors

Shang, Huiling; White, Marvin H.; Guarini, Kathryn W.; Solomon, Paul; Cartier, Eduard; McFeely, Fenton R.; Yurkas, John J.; Lee, Wen-Chin
May 2001
Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3139
Academic Journal
The Si/SiO[sub 2] interface in 100-nm-thick chemical vapor deposition (CVD) tungsten gate metal-oxide-semiconductor (MOS) structures exhibits high interface state densities (D[sub it0]>5x10[sup 11]/cm[sup 2] eV) after conventional forming gas anneals over varying temperatures and times. In this letter, we show this is a consequence of the low diffusivity and solubility of molecular hydrogen in tungsten and the high temperature CVD process. We have discovered that atomic hydrogen is more effective in passivating tungsten gate MOS interfaces because of its higher diffusivity in tungsten. Atomic hydrogen can be produced (1) by the reaction of aluminum with water vapor when aluminum is evaporated on the top of tungsten, (2) by hydrogen implantation, and (3) by hydrogen plasma. These techniques can passivate the Si/SiO[sub 2] interface effectively in MOS structures (D[sub it0]<5x10[sup 10]/cm[sup 2] eV) with 100-nm thick CVD tungsten gates. © 2001 American Institute of Physics.


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